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GaN Semiconductors Devices Market 2019 Global Industry Size Analyzed by Business Opportunity, Development, Market Size & Growth, Applications Analysis and Future Prospects 2023

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Global “GaN Semiconductors Devices Market 2019-2023” has been providing up and changing the worldwide economy as far as growth rate, revenue, deal, market proposition, and scope. The Global GaN Semiconductors Devices market Consumption market report is an extensive analysis of this corporate field, which has been established to be one of the most profitable business verticals in futures. The Reportspecifies the complete estimate of Global GaN Semiconductors Devices market business terms, in addition to presenting a brief segmentation of the industry, the expansion opportunities, as well as Key region.

Top-Listed Playersin GaN Semiconductors Devices Market Research Report 2019-2023

  • Toshiba Corporation
  • Panasonic Corporation
  • Cree Inc.
  • GaN Systems Inc.
  • Infineon Technologies AG
  • OSRAM GmbH
  • Efficient Power Conversion Corporation
  • NXP Semiconductors N.V.
  • NTT Advanced Technology Corporation.

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Overview of GaN Semiconductors Devices Market:

The global GaN semiconductor device market was valued at USD 711.44 million in 2017, and is expected to reach USD 1,842.8 million by 2023, registering a CAGR of 17.1%, over the forecast period of 2018-2023. The scope of the report is limited to solutions offered by major players, including providers of transistors, diodes, rectifiers, and power ICs.
The growing demand for radio frequency in the semiconductor market, booming consumer electronics market (particularly LED-based lighting and displays) and increasing electric vehicles and photovoltaic inverters are some of the major drivers of the GaN semiconductor device market. The demand for smartphones, gaming devices, laptops, and TVs is also expected to offer a modest growth potential to the GaN semiconductor device market, in the consumer electronics sector. With the mature market of smartphones and laptops, although consumer electronics held the largest share in the recent years, it is expected to reduce its pace, thus paving the way for the expansion of the aerospace and defense industry.

Besides, the replacement of incandescent lamps with GaN LEDs in automobiles and the growing demand for electric vehicles are augmenting the growth rate of GaN semiconductor devices in the automotive sector. According to IEA, the number of battery electric vehicles in use increased from 113,000 in 2012 to 1,209,000 in 2016.
However, the high production cost of gallium nitride as compared to silicon carbide, is one of the major factors which might hinder the growth of the global market.

Growth of New Industries Expected to Offer Opportunities for Expansion

With the advent of semiconductors made from gallium nitride, many chipmakers are now using GaN to make chips that support wireless electricity (WiTricity). Gallium nitride also enables the chipmakers to reduce the cost of the integrated circuits, thus driving wide adoption among the semiconductor manufacturing companies. Wireless charging applications include phones, tablets, drones, laptops, industrial robots, appliances, and automotive applications.

Autonomous vehicles use eGaN chips in the LiDAR systems installed, to sense the environment around them. GaN chips are proved to be accurate over silicon chips to the scale of inches, while silicon chips are limited to a range of 10 feet. Hence, with the increasing usage of GaN chips in the new industries, such as wireless charging and self-driving cars, the GaN semiconductor market is expected to grow lucratively over the forecast period.

Consumer Electronics Segment accounted for the Maximum Share

Owing to growing innovations and adoption in the industry, the price of GaN semiconductor technologies is expected to decrease, thus boosting its adoption in the industry, at a fast pace. Due to various advantages, such as higher efficiency of operation and higher frequency of support, many circuit boards used in day-to-day consumer electronic devices are expected to be replaced with GaN semiconductor technologies. The onset of GaN semiconductors is expected to revolutionize the charging technologies in existing devices. They are being employed in wireless charging, fast charging, and in laptop chargers. Cambridge Electronic Inc. has developed advanced transistors to be used for charging purposes, which are approximately 1.5 cubic inches in volume. Many innovations where the charging adapter is being deployed inside the laptop are also expected to occur, thus driving the market for GaN technologies in consumer electronics. Owing to their functioning efficiency and lesser size of the chip, which helps in the cost saving and enhancing the aesthetic appeal from a consumer’s perspective, these devices are also being employed in LED-based TV screens. Moreover, the reduction in size of these devices, such as in a UPS, facilitates increasing the available office space or domestic space, which can be used more productively.

Asia-Pacific expected to Witness the Fastest Growth Rate

The lower labor and production costs in Asia-Pacific are other crucial factors fueling the growth of this market. Moreover, owing to increasing production and export of consumer electronics products from China and Japan, Asia-Pacific is expected to hold the highest share in the GaN semiconductor market by 2023. China is one of the world’s biggest EV markets, as well as the largest market for plug-ins (or new energy vehicles, NEV, as they are called in China).

In 2017, Tesla Motors announced plans to open its first manufacturing site outside the United States, in Shanghai. These factors are expected to increase the demand of GaN semiconductors in China. Similarly, under the new government’s plans to curb pollution, India has committed to sell only electric cars by 2030. Furthermore, Maruti Suzuki, the country’s biggest car manufacturer, has teamed up with Toyota, to launch its first electric car by 2019-2020. These factors are expected to increase the demand for GaN semiconductor in India. In addition, the Indian government has announced an investment of 2.5% of its GDP on healthcare, starting from 2020 (USD 57 billion according to 2016 GDP), further increasing the demand for GaN semiconductors in healthcare segment.

Major Players: TOSHIBA CORPORATION, PANASONIC CORP., CREE INC., GAN SYSTEMS INC., INFINEON TECHNOLOGIES AG, OSRAM GMBH, EFFICIENT POWER CONVERSION CORPORATION, NXP SEMICONDUCTORS NV, TEXAS INSTRUMENTS, AND NTT ADVANCED TECHNOLOGY CORPORATION, amongst others.

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Key Highlights from GaN Semiconductors Devices Market Report 2019.

Revenue and Sales Estimation — Historical Revenue and sales volume is presented and further data is triangulated with top-down and bottom-up approaches to forecast complete market size and to estimate forecast numbers for key regions covered in the report along with classified and well recognized Types and end-use industry. Additionally, macroeconomic factor and regulatory policies are as curtained in GaN Semiconductors Devices industry evolution and predictive analysis.

Manufacturing Analysis —the report is currently analyzed concerning various product type and application. The GaN Semiconductors Devices Market provides a chapter highlighting manufacturing process analysis validated via primary information collected through Industry and Key officials of profiled companies.

Competition — Leading players have been analyzed depending on their company profile, product portfolio, capacity, product/service price, sales, and cost/profit.

Demand and Supply and Effectiveness — GaN Semiconductors Devices Market report additionally provides distribution, Production, Consumption for the complete industry.

GaN Semiconductors Devices MarketTop Regions(regional analysis covers):-

  • North America (the USA, Canada, andMexico)
  • Europe (Germany, France, UK, Russia, andItaly)
  • Asia-Pacific (China, Japan, Korea, India, andSoutheast Asia)
  • South America, Middle East, andAfrica

Reasons to Purchase this Report

  • Understanding the impact of opportunities offered by technological advancements, which are leading to an increased demand for efficient and high-performance RF components.
  • Analyzing various perspectives of the market with the help of Porter’s five forces analysis.
  • Growth of various hardware products, such as transistors, diodes, rectifiers, and power ICs.
  • Regional analysis of the market.
  • Identify the latest developments, market shares, and strategies employed by the major market players.
  • 3 months analyst support along with the Market Estimate sheet (in excel).

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GaN Semiconductors Devices Market 2019 Report Brief:-

  • The report covers forecast and analysis for the GaN Semiconductors Devices market on a global and regional level
  • The report includes the drivers and the restraints that affect the growth of the market
  • Detailed information about the market opportunities are discussed
  • The key target audience for the market has been determined in the report
  • The revenue generated by the prominent industry players has been analyzed in the report
  • The market numbers have been calculated using top-down and the bottom-up approaches
  • The market is segmented on the basis of product, technology, ownership, and end-user industry which in turn is bifurcated on the regional level as well
  • All the segments have been evaluated based on the present and the future trends
  • The report deals with the in-depth quantitative and qualitative analyses of the GaN Semiconductors Devices market
  • The report includes detailed company profiles of the prominent market players

Look into Table of Content of GaN Semiconductors Devices Market 2019 Research Report at

https://www.360researchreports.com/TOC/13100821#TOC

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